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| NE W CZT31C NPN CZT32C PNP Central DESCRIPTION: TM Semiconductor Corp. 2.0W COMPLEMENTARY SILICON POWER TRANSISTOR POWER TM 223 The CENTRAL SEMICONDUCTOR CZT31C and CZT32C types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 3.0 amps. SOT-223 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ,Tstg JA 100 100 5.0 3.0 6.0 1.0 2.0 -65 to +150 62.5 UNITS V V V A A A W oC oC/W ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted) SYMBOL ICES ICEO IEBO BVCEO * VCE(SAT) * VBE(ON) * hFE * hFE fT * Pulsed, 2%D.C. TEST CONDITIONS VCE=100V VCE=60V VEB=5.0V IC=30mA IC=3.0A, IB=375mA VCE=4.0V, IC=3.0A VCE=4.0V, IC=1.0A VCE=4.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz MIN MAX 200 300 1.0 1.2 1.8 25 10 3.0 100 MHz UNITS A A mA V V V 100 294 All dimensions in inches (mm). LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR R2 R1 295 |
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